CVD Sic Ring for Semiconductor Chip Manufacturing

Product Details
Customization: Available
Coating Color: Silver Grey
Application: Semiconductor Epitaxy
Manufacturer/Factory & Trading Company
Gold Member Since 2025

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  • CVD Sic Ring for Semiconductor Chip Manufacturing
  • CVD Sic Ring for Semiconductor Chip Manufacturing
  • CVD Sic Ring for Semiconductor Chip Manufacturing
  • CVD Sic Ring for Semiconductor Chip Manufacturing
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  • Overview
  • Company Profile
  • Product Description
  • Detailed Photos
  • Product Parameters
  • Our Advantages
  • Certifications
  • FAQ
Overview

Basic Info.

Model NO.
CVD SIC COATING
Feature
Corrosion Resistant, Oxidation Resistant, Heat Resistance, Wear Resistance
Coating Structure
Thin Film
Coating Material
Sic
Substrate
Isostatic Graphite
Coating
β-Sic
Coating Thickness
100-150μm
Flexural Strength
≥50MPa
Material Consistency
Over 95%
Material Purity
99.9995%
Transport Package
Wooden Box
Specification
Customizable
Trademark
DZ
Origin
China
Production Capacity
80000PCS/Year

Product Description

Company Profile


Hunan Dezhi New Material Co., Ltd. is a high-tech enterprise focusing on the research, development, production and sales of high-end materials such as carbon-based and ceramics. Dezhi is the first company to achieve mass production of Solid SiC etching components for semiconductors in China, and has high-end technology, equipment and a high-level R&D team. The company currently has about 300+ employees, of which R&D personnel account for 20%. Our R&D capabilities and product quality are unanimously recognized by the industry and main products include CVD@SiC coatings, Solid SiC, Sin@SiC-SiC, CVD@TaC coatings and other series of products, which are widely used in LED optoelectronics, integrated circuits, third-generation semiconductors and other fields.
CVD Sic Ring for Semiconductor Chip Manufacturing

Product Description


Dezhi advanced material products cover carbon-based, ceramic and other high-end materials, used in all aspects of semiconductor chip manufacturing, such as single crystal growth, epitaxy, etching, diffusion, CVD, PVD, etc. 

 

Product performance:

 

 

High Temperature Resistance

 

High Pressure Resistance

 

Wear Resistance

 

High Service Life

 

Corrosion Resistance

 

High Purity

 

Materials and Characteristics

Substrate: Sintered SiC  (thickness>0.5mm)

Coating:  β-SiC (thickness<300μm)

 

Application Scenarios

Wafer Fabrication

• Epitaxial

• Diffusion

 

Implementation Technology

• Precision Machining (Graphite)

• Low Pressure Chemical Vapor Deposition

 

Performance Requirements

• High density

• Strong combination

• High purity

• High thermal conductivity

• Corrosion resistance

• Resistance to cracking

 

Application Areas

• LED Photoelectric

• Integrated circuits

• Third-generation semiconductors

Detailed Photos

CVD Sic Ring for Semiconductor Chip Manufacturing

Product Parameters
Product Range Materials and properties Application Scenario Implementation Technology Performance requirements
CVD@SiC coating series Substrate: Isostatic graphite    (Thickness 1~20 mm)              Coating: β-SiC  (Thickness <100 μm) Wafer manufacturing      Epitaxial growth              Diffusion Precision machining (graphite)                              Low pressure chemical vapor deposition       (LPCVD) High density                                                          Strong bonding                                                        High purity                                                        High thermal conductivity                                        Corrosion resistance                                                Anti-cracking

CVD Sic Ring for Semiconductor Chip Manufacturing

Our Advantages

Advantages of SiC Coated Graphite Wafer Carrier
1. Enhanced Durability: The SiC coating increases the wear resistance of the graphite material, reducing the risk of degradation over multiple uses.

2. High-Temperature Stability: The Wafer Carrier can tolerate the extreme temperatures common in epitaxial growth furnaces, maintaining its structural integrity without warping or cracking.

3. Improved Yield and Process Efficiency: By ensuring the wafers are handled securely and consistently, the SiC-coated graphite Wafer Carrier helps improve the overall yield and efficiency of the epitaxial growth process.

4. Customization Options: The carrier can be customized in terms of size and configuration to meet the specific needs of different epitaxial reactors, providing flexibility for a wide range of semiconductor applications.

Advantages of Hunan Dezhi New Materail
1. Fast delivery response: Sample delivery 7-15 days &  bulk delivery 1 month
2. Flexible customization service: Dedicated production lines to match customer needs & Personalized service For product solution support
3. Professional technical support: Professional material testing and analysis center & Quickly cooperate with development and verification needs
4. Robust supply chain: Stable supply chain system, Many long-term cooperative suppliers with good reputation. 

Certifications

CVD Sic Ring for Semiconductor Chip Manufacturing

FAQ

Q. Are you a factory or a trading company?
A: we are the leading factory of SiC Material Components For Semiconductors in China. 

Q. When can i get the price?
A: We usually quote within 24 hours after getting your detailed requirements,like size, quantity etc. .
If it is an urgent order, you can call us directly.

Q. What about the lead time for mass product?
A: The lead time is based on the details of the product, generally 20-30 working days.

Q.What is your terms of delivery?
A: We accept FOB, CFR, CIF, EXW, etc. You can choose the most convenient way for you.
Besides that, we can also shipping by Air and Express.

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